Rapid chamber clean using concurrent in-situ and remote plasma sources

The invention relates to rapid chamber clean using concurrent in-situ and remote plasma sources. A method for cleaning a processing chamber of a substrate processing system includes supplying nitrogentrifluoride (NF3) gas to a remote plasma source (RPS); generating RPS plasma using the RPS; supplying the RPS plasma to the processing chamber; supplying NF3 gas as bypass gas to the processing chamber; striking in-situ plasma in the processing chamber while the RPS plasma is supplied; and cleaning the processing chamber during a cleaning period using both the RPS plasma and the in-situ plasma. 本发明涉及使用同时存在的原位和远程等离子体源进行快速室清洁。一种用于清洁衬底处理系统的处理室的方法包括：向远程等离子体源(RPS)供应三氟化氮(NF)气体；使用所述RPS产生RPS等离子体；向所述处理室供应所述RPS等离子体；将NF气体作为旁路气体供应至所述处理室；在供应所述RPS等离子体的同时在所述处理室中激励原位等离子体；并且在清洁时间段期间使用所述RPS等离子体和所述原位等离子体两者清洁所述处理室。