Doping method, single crystal device and single crystal furnace

The invention provides a doping method, a single crystal device and a single crystal furnace. The method comprises the following steps: adding a dopant with a first preset mass into a silicon melt before a current monocrystalline silicon rod is drawn; detecting the growth length of the current monocrystalline silicon rod in a drawing process of the current monocrystalline silicon rod; and adding adopant proportional to a second preset mass into the silicon melt when the growth length of the current monocrystalline silicon rod meets a preset condition. According to the invention, addition of the dopant and drawing of the current monocrystalline silicon rod can be carried out synchronously; in the drawing process of the monocrystalline silicon, the dopant is added into the silicon melt whenthe growth length of the current monocrystalline silicon rod meets the preset condition; and due to centripetal force generated by rotation of a crucible, the dopant can be uniformly distributed on the surface of the silicon