Display and preparation method thereof
The invention relates to a display and a preparation method thereof. In the preparation method of the display, the applied mask adopts a silicon wafer as a main body, and the silicon wafer is providedwith a plurality of openings formed by a through silicon via technology. The openings of the mask ar...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | ZHOU WENBIN SHI KAIXING MU XINJU |
| description | The invention relates to a display and a preparation method thereof. In the preparation method of the display, the applied mask adopts a silicon wafer as a main body, and the silicon wafer is providedwith a plurality of openings formed by a through silicon via technology. The openings of the mask are formed by adopting the through silicon via technology and are not limited by a preparation technology of the metal mask, so that the size of the openings in the mask can be reduced, and the pixel density of the display is further increased.
本发明涉及一种显示器及其制备方法。该显示器的制备方法中，所使用的掩膜版采用硅晶片作为主体，且硅晶片上具有多个采用硅通孔技术形成的开口。该掩膜版的开口采用硅通孔技术形成，不受限于金属掩膜版的制备技术，从而可以减小掩膜版上的开口大小，进而增加显示器的像素密度。 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN110518134A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN110518134A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN110518134A3</originalsourceid><addsrcrecordid>eNrjZFBzySwuyEmsVEjMS1EoKEotSCxKLMnMz1PITS3JyE9RKMlILUrNT-NhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGBqaGFobGJo7GxKgBAHkkJ5k</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Display and preparation method thereof</title><source>esp@cenet</source><creator>ZHOU WENBIN ; SHI KAIXING ; MU XINJU</creator><creatorcontrib>ZHOU WENBIN ; SHI KAIXING ; MU XINJU</creatorcontrib><description>The invention relates to a display and a preparation method thereof. In the preparation method of the display, the applied mask adopts a silicon wafer as a main body, and the silicon wafer is providedwith a plurality of openings formed by a through silicon via technology. The openings of the mask are formed by adopting the through silicon via technology and are not limited by a preparation technology of the metal mask, so that the size of the openings in the mask can be reduced, and the pixel density of the display is further increased.
本发明涉及一种显示器及其制备方法。该显示器的制备方法中，所使用的掩膜版采用硅晶片作为主体，且硅晶片上具有多个采用硅通孔技术形成的开口。该掩膜版的开口采用硅通孔技术形成，不受限于金属掩膜版的制备技术，从而可以减小掩膜版上的开口大小，进而增加显示器的像素密度。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191129&DB=EPODOC&CC=CN&NR=110518134A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191129&DB=EPODOC&CC=CN&NR=110518134A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHOU WENBIN</creatorcontrib><creatorcontrib>SHI KAIXING</creatorcontrib><creatorcontrib>MU XINJU</creatorcontrib><title>Display and preparation method thereof</title><description>The invention relates to a display and a preparation method thereof. In the preparation method of the display, the applied mask adopts a silicon wafer as a main body, and the silicon wafer is providedwith a plurality of openings formed by a through silicon via technology. The openings of the mask are formed by adopting the through silicon via technology and are not limited by a preparation technology of the metal mask, so that the size of the openings in the mask can be reduced, and the pixel density of the display is further increased.
本发明涉及一种显示器及其制备方法。该显示器的制备方法中，所使用的掩膜版采用硅晶片作为主体，且硅晶片上具有多个采用硅通孔技术形成的开口。该掩膜版的开口采用硅通孔技术形成，不受限于金属掩膜版的制备技术，从而可以减小掩膜版上的开口大小，进而增加显示器的像素密度。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBzySwuyEmsVEjMS1EoKEotSCxKLMnMz1PITS3JyE9RKMlILUrNT-NhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGBqaGFobGJo7GxKgBAHkkJ5k</recordid><startdate>20191129</startdate><enddate>20191129</enddate><creator>ZHOU WENBIN</creator><creator>SHI KAIXING</creator><creator>MU XINJU</creator><scope>EVB</scope></search><sort><creationdate>20191129</creationdate><title>Display and preparation method thereof</title><author>ZHOU WENBIN ; SHI KAIXING ; MU XINJU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN110518134A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHOU WENBIN</creatorcontrib><creatorcontrib>SHI KAIXING</creatorcontrib><creatorcontrib>MU XINJU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHOU WENBIN</au><au>SHI KAIXING</au><au>MU XINJU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Display and preparation method thereof</title><date>2019-11-29</date><risdate>2019</risdate><abstract>The invention relates to a display and a preparation method thereof. In the preparation method of the display, the applied mask adopts a silicon wafer as a main body, and the silicon wafer is providedwith a plurality of openings formed by a through silicon via technology. The openings of the mask are formed by adopting the through silicon via technology and are not limited by a preparation technology of the metal mask, so that the size of the openings in the mask can be reduced, and the pixel density of the display is further increased.
本发明涉及一种显示器及其制备方法。该显示器的制备方法中，所使用的掩膜版采用硅晶片作为主体，且硅晶片上具有多个采用硅通孔技术形成的开口。该掩膜版的开口采用硅通孔技术形成，不受限于金属掩膜版的制备技术，从而可以减小掩膜版上的开口大小，进而增加显示器的像素密度。</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN110518134A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Display and preparation method thereof |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T05%3A53%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZHOU%20WENBIN&rft.date=2019-11-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN110518134A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |