Semiconductor device and manufacturing method thereof

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device manufacturing method comprises the steps of: preparing a semiconductor wafer including an electrode formed therein, and electrically connecting a first semiconductor element formed in a semicon...

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Hauptverfasser: TAMAGAWA MICHIAKI, WATANABE SHINJI, KUMAGAI KINICHI, MATSUBARA HIROAKI, MIYAKOSHI TAKESHI, SAKUMOTO SHOTARO, NAKAMURA TAKU, DEMACHI HIROSHI, HOSOYAMADA SUMIKAZU, NAKAMURA SHINGO, CHIKAI TOMOYA, IWASAKI TOSHIHIRO, ISHIDO KIMINORI, HONDA HIROKAZU
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device manufacturing method comprises the steps of: preparing a semiconductor wafer including an electrode formed therein, and electrically connecting a first semiconductor element formed in a semiconductor chip and the electrode formed in the semiconductor wafer to each other via a bump; before orafter connecting the semiconductor wafer and the semiconductor chip to each other, filling a gap between the semiconductor wafer and the semiconductor chip, facing each other, with a first insulatingresin layer; forming a second insulating resin layer on the semiconductor wafer to have a thickness sufficient to embed the semiconductor chip; grinding the second insulating resin layer and the semiconductor chip until a thickness of the semiconductor chip reaches a predetermined thickness; forming a first insulating layer on the second insulating resin layer and the semiconductor chip, and forming an opening in the first