Three-dimensional integrated system thermal analysis method based on silicon through hole

The invention discloses a three-dimensional integrated system thermal analysis method based on a silicon through hole, and the method comprises the steps: decomposing the three-dimensional integratedsystem into a single power cell, considering the impact from the lateral thermal resistance and longitudinal thermal resistance of the silicon through hole in the power cell, and building a segmentedthermal resistance model; obtaining a matrix equation containing the temperatures of the upper and lower chips according to the Kirchhoff's law; establishing expressions of thermal resistances R1-R8 according to a thermal resistance expression mode in heat transfer science; substituting the expressions of the thermal resistances R1-R8 into a matrix equation containing the temperatures of the upperchip and the lower chip to solve an equation set about the temperature T so as to obtain the temperature rise condition of each layer of chip in the three-dimensional integrated system. The problemsthat in the prior art, a one