Device for reducing twin crystals of GaAs crystals based on VGF method

The invention relates to the technical field of semiconductor preparation devices, and more particularly to a device for reducing twin crystals of GaAs crystals based on a (vertical gradient freeze) VGF method. The device comprises a pyrolytic boron nitride (PBN) crucible, a quartz tube and heaters; the quartz tube is arranged on a furnace core; a heat preservation support is arranged between thequartz tube and the furnace core; a glass rod is arranged in the furnace core; the PBN crucible and the quartz tube are arranged in the heat preservation device; the heat preservation device is of a hollow cylindrical structure with an opening at the lower part; and the inner wall of the heat preservation device is embedded with the heaters. Heat radiation heating of the furnace core, the cruciblefurnace and the quartz tube is realized through a plurality of groups of heaters, and the plurality of groups of heaters operate independently to realize heating of different parts at different temperatures; a heat loss chann