Process method for solving problem of deformation of silicon carbide large plate which is sintered at normal pressure

The invention discloses a process method for solving the problem of deformation of a silicon carbide large plate which is sintered at normal pressure. The process method includes blank preparation, gum discharging, temperature control and other steps. The process method has the advantages that the p...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZHANG HUAISHUN, LIU TONGWEN, YU HAIPEI, WANG RUJIANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention discloses a process method for solving the problem of deformation of a silicon carbide large plate which is sintered at normal pressure. The process method includes blank preparation, gum discharging, temperature control and other steps. The process method has the advantages that the problem of difficult forming of the large plate is solved, a large amount of gum in a blank body is discharged through gum discharging treatment, the stress in the blank body is eliminated, the problems of deformation and cracks of the blank body during high temperature sintering are solved, and theproduct quality is improved. 本发明公开了一种解决常压烧结碳化硅大板变形问题的工艺方法,包括制坯、排胶和温度控制等步骤;本发明的优点在于:解决了大板成型难的问题,通过排胶处理排除了胚体内的大量胶质,清除了坯体内的应力,解决了坯体在高温烧结时变形裂纹等难题,提高了产品质量。