Alkaline cleaning agent for integrated circuit wiring low-k dielectric material after polishing and cleaning method thereof

The invention relates to an alkaline cleaning agent for an integrated circuit wiring low-k dielectric material after polishing and a cleaning method thereof. The cleaning agent is prepared from a nonionic surfactant, an amphoteric surfactant, a pH regulator and deionized water, wherein the mass of the nonionic surfactant is 0.3%-2% of the mass of water; the mass of the amphoteric surfactant is 0.1%-1.5% of the mass of the deionized water; the pH value of the cleaning agent is 9-10. According to the cleaning method, by setting the washing parameters and adding the steps of heating, drying and CVD treatment, the low-k dielectric material can be protected, the service lifetime of a brush is prolonged, the damaged part of the low-k material structure can be repaired, and recovery of the k value is achieved. 本发明为一种碱性集成电路布线抛光后低k介质清洗剂及其清洗方法。所述的清洗剂的组成包括非离子表面活性剂、两性表面活性剂、pH调节剂和去离子水，其中，非离子表面活性剂质量是水的质量的0.3％-2％；两性表面活性剂的质量为去离子水质量的0.1％-1.5％；清洗剂的pH值为9-10。清洗方法中，通过洗刷参数的设置，以及加热烘干、CVD处理步骤的增加，本发明可以对低k介质材料进行保护，改善刷子使用寿命，并能对低k材料结构破坏