Manufacturing method for silicon carbide epitaxial wafer and manufacturing method for silicon carbide semiconductor device

In the present invention, a silicon carbide substrate (2) is disposed such that a main surface thereof is parallel to a plurality of injection holes (8), arranged in a row, of a lateral CVD device. Source gas is supplied from the plurality of injection holes (8) to epitaxially grow a silicon carbide...

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Bibliographische Detailangaben
1. Verfasser:	OHNO AKIHITO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	In the present invention, a silicon carbide substrate (2) is disposed such that a main surface thereof is parallel to a plurality of injection holes (8), arranged in a row, of a lateral CVD device. Source gas is supplied from the plurality of injection holes (8) to epitaxially grow a silicon carbide epitaxial growth layer (10) on the main surface of the silicon carbide substrate (2). The source gas supplied from the plurality of injection holes (8) is divided into a plurality of system lines, each of which is controlled by a separate mass flow controller (9a-9l). The flow rate of the source gas on the main surface of the silicon carbide substrate (2) is greater than 1m/sec. 将碳化硅衬底(2)配置为使主面相对于横向型CVD装置的横向一列地排列的多个喷射孔(8)平行。从多个喷射孔(8)供给原料气体而在碳化硅衬底(2)的主面之上使碳化硅外延生长层(10)外延生长。从多个喷射孔(8)供给的原料气体被分割至多个系统管线，分别由单独的质量流量控制器(9a～9l)进行控制。碳化硅衬底(2)的主面之上的原料气体的流速大于1m/sec。