ELECTROSTATIC CHUCK WITH FLEXIBLE WAFER TEMPERATURE CONTROL

An apparatus for processing a substrate is provided. A first coolant gas pressure system, a second coolant gas pressure system, a third coolant gas pressure system, and a fourth coolant gas pressure system are provided to provide independent gas pressures. An electrostatic chuck has a chuck surface with a center point and a radius and comprises a first plurality of coolant gas ports further than afirst radius from a center point, a second plurality of coolant gas ports spaced between the first radius from the center point and a second radius from the center point, a third plurality of coolantgas ports spaced between the second radius from the center point and a third radius from the center point, and a fourth plurality of coolant gas ports is spaced within the third radius from the center point. An outer sealing band extends around the chuck surface. 提供了一种用于处理衬底的装置。提供第一冷却剂气体压强系统、第二冷却剂气体压强系统、第三冷却剂气体压强系统和第四冷却剂气体压强系统以提供独立的气体压强。静电卡盘具有带有中心点和半径的卡盘表面，并且包括：第一多个冷却剂气体端口，其在与所述中心点相距大于第一半径处；第二多个冷却剂气体端口，其在与所述中心点相距第一半径处和与所述