Semiconductor component and manufacturing method thereof

The invention discloses a semiconductor component and a manufacturing method thereof. The manufacturing method of the semiconductor component comprises the steps that a substrate with a magnetic tunneling junction (MTJ) region and an edge region is provided; a first inter-metal dielectric layer is formed on the substrate; a first magnetic tunneling junction and a second magnetic tunneling junctionare formed on the first inter-metal dielectric layer, wherein the first magnetic tunneling junction is arranged on the magnetic tunneling junction region and the second magnetic tunneling junction isarranged on the edge region; and a second inter-metal dielectric layer is formed on the first magnetic tunneling junction and the second magnetic tunneling junction. 本发明公开一种半导体元件及其制作方法，该制作半导体元件的方法为，主要先提供一基底包含一磁性隧穿接面(magnetic tunneling junction,MTJ)区域以及一边缘区域，然后形成一第一金属间介电层于该基底上，再形成一第一磁性隧穿接面以及一第二磁性隧穿接面于第一金属间介电层上，其中第一磁性隧穿接面设于磁性隧穿接面区域上而第二磁性隧穿接面则设于边缘区域上。之后再形成一第二金属间介电层于第一磁性隧穿接面以及第二磁性隧穿接面上。