Novel radio frequency transmission structure
The invention discloses a novel radio frequency transmission structure, which includes a silicon substrate and a radio frequency signal transmission through-silicon via TSV and a plurality of groundedthrough-silicon vias TSV disposed on the silicon substrate, wherein the radio frequency signal trans...
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| creator | WU XIAODONG HU LIULIN CHEN YIJUN ZHOU WENJIN XIAO LONG HOU JIE HE SHUWEI WANG BING LI QIANGBIN MA SHENGLIN ZHOU PENG LU CHAOBAO |
| description | The invention discloses a novel radio frequency transmission structure, which includes a silicon substrate and a radio frequency signal transmission through-silicon via TSV and a plurality of groundedthrough-silicon vias TSV disposed on the silicon substrate, wherein the radio frequency signal transmission through-silicon via TSV is disposed in the center of the circle formed by the grounded through-silicon vias TSV, and a coaxial-like structure is formed; and the in-via diameter of the radio frequency signal transmission through-silicon via TSV is greater than that of the grounded through-silicon via TSV. According to the radio frequency transmission structure disclosed in the invention, in a mode of combining the small-sized high-depth-to-diameter ratio TSV with the traditional-aperturehollow structure TSV, while an electrical interconnection path that vertically penetrates a microelectronic chip body is realized and chip-level three-dimensional stacking integration and packaging are supported, the packagin |
| format | Patent |
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According to the radio frequency transmission structure disclosed in the invention, in a mode of combining the small-sized high-depth-to-diameter ratio TSV with the traditional-aperturehollow structure TSV, while an electrical interconnection path that vertically penetrates a microelectronic chip body is realized and chip-level three-dimensional stacking integration and packaging are supported, the packagin</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191115&DB=EPODOC&CC=CN&NR=110459528A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191115&DB=EPODOC&CC=CN&NR=110459528A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WU XIAODONG</creatorcontrib><creatorcontrib>HU LIULIN</creatorcontrib><creatorcontrib>CHEN YIJUN</creatorcontrib><creatorcontrib>ZHOU WENJIN</creatorcontrib><creatorcontrib>XIAO LONG</creatorcontrib><creatorcontrib>HOU JIE</creatorcontrib><creatorcontrib>HE SHUWEI</creatorcontrib><creatorcontrib>WANG BING</creatorcontrib><creatorcontrib>LI QIANGBIN</creatorcontrib><creatorcontrib>MA SHENGLIN</creatorcontrib><creatorcontrib>ZHOU PENG</creatorcontrib><creatorcontrib>LU CHAOBAO</creatorcontrib><title>Novel radio frequency transmission structure</title><description>The invention discloses a novel radio frequency transmission structure, which includes a silicon substrate and a radio frequency signal transmission through-silicon via TSV and a plurality of groundedthrough-silicon vias TSV disposed on the silicon substrate, wherein the radio frequency signal transmission through-silicon via TSV is disposed in the center of the circle formed by the grounded through-silicon vias TSV, and a coaxial-like structure is formed; and the in-via diameter of the radio frequency signal transmission through-silicon via TSV is greater than that of the grounded through-silicon via TSV. 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According to the radio frequency transmission structure disclosed in the invention, in a mode of combining the small-sized high-depth-to-diameter ratio TSV with the traditional-aperturehollow structure TSV, while an electrical interconnection path that vertically penetrates a microelectronic chip body is realized and chip-level three-dimensional stacking integration and packaging are supported, the packagin</abstract><oa>free_for_read</oa></addata></record> |
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| title | Novel radio frequency transmission structure |
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