Novel radio frequency transmission structure
The invention discloses a novel radio frequency transmission structure, which includes a silicon substrate and a radio frequency signal transmission through-silicon via TSV and a plurality of groundedthrough-silicon vias TSV disposed on the silicon substrate, wherein the radio frequency signal trans...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a novel radio frequency transmission structure, which includes a silicon substrate and a radio frequency signal transmission through-silicon via TSV and a plurality of groundedthrough-silicon vias TSV disposed on the silicon substrate, wherein the radio frequency signal transmission through-silicon via TSV is disposed in the center of the circle formed by the grounded through-silicon vias TSV, and a coaxial-like structure is formed; and the in-via diameter of the radio frequency signal transmission through-silicon via TSV is greater than that of the grounded through-silicon via TSV. According to the radio frequency transmission structure disclosed in the invention, in a mode of combining the small-sized high-depth-to-diameter ratio TSV with the traditional-aperturehollow structure TSV, while an electrical interconnection path that vertically penetrates a microelectronic chip body is realized and chip-level three-dimensional stacking integration and packaging are supported, the packagin |
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