Double-waveguide coupled plasma electrooptical modulator
The invention relates to a double-waveguide coupled plasma electrooptical modulator and aims at solving the technical problem that size can not be compatible with the average coupling efficiency and extinction ratio performances as well as the problem that a straight-through type electrooptical modu...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a double-waveguide coupled plasma electrooptical modulator and aims at solving the technical problem that size can not be compatible with the average coupling efficiency and extinction ratio performances as well as the problem that a straight-through type electrooptical modulator can not be well applied to an ORNoC on-chip optical network. By adopting the technical schemethat the double-waveguide coupled plasma electrooptical modulator comprises a SiO2 substrate, three Si waveguides consistent in waveguide parameters are etched on the SiO2 substrate, a Si waveguide atone outer side is used for inputting laser light, a Si waveguide at the other outer side is used for transmitting a modulated laser signal and being connected with an on-chip optical network, a firstHfO2 layer, an ITO layer, a second HfO2 layer and a conductor layer are deposited above a Si waveguide located in the middle, the conductor layer applies an anode voltage and a Si waveguide surface located above the SiO2 subst |
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