Red-yellow light emitting diode chip with high-reflection P electrode

The invention belongs to the technical field of light emitting diodes, and discloses a red-yellow light emitting diode chip with a high-reflection P electrode, and the chip is provided with a P surface, wherein a layer of SiO2 or ITO grows on the P surface firstly, and SiO2 or ITO holes are etched in the P surface through photoetching; P surface ohmic contact electrodes are formed in the holes; amicron reflection electrode is formed on SiO2 or ITO, and the reflection electrode plays a role of a bonding layer and is connected with SiO2; the reflection electrode and SiO2 or ITO form a holophoteof the chip; the holophote and the conductive substrate are bonded together, and an N electrode is arranged at the upper end of the N layers of the light emitting diode chip. According to the invention, Ag and SiO2 or ITO can be tightly bonded together, and Ag is used as a reflecting electrode, so that the manufacturing cost of the chip is reduced, and the reflectivity of red-yellow light is improved. 本发明属于发光二极管技术领域，公开了一种