Manufacturing method of metal salient point and chip
The invention discloses a manufacturing method of metal salient point and a chip. The method comprises the steps of at least performing first electroplating processing and second electroplating processing on a bonding pad of the chip, and respectively forming a first electroplating layer and a secon...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | MO LEIQING SUN BIN |
| description | The invention discloses a manufacturing method of metal salient point and a chip. The method comprises the steps of at least performing first electroplating processing and second electroplating processing on a bonding pad of the chip, and respectively forming a first electroplating layer and a second electroplating layer which are laminated, wherein at least one part of parameters of the first electroplating processing and the second electroplating processing are different; and annealing the chip. By the method, resources can be saved, the risk is reduced, and the production complexity is reduced.
本申请公开了一种金属凸点的制造方法和芯片，该方法包括：对芯片的焊盘至少进行第一电镀处理和第二电镀处理，分别形成层叠第一电镀层和第二电镀层，且第一电镀处理和第二电镀处理的至少部分参数不同；对芯片进行退火处理。通过上述方式，本申请能够节约资源，降低风险，降低生产复杂度。 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN110444479A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN110444479A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN110444479A3</originalsourceid><addsrcrecordid>eNrjZDDxTcwrTUtMLiktysxLV8hNLcnIT1HITwOxEnMUihNzMlPzShQK8jOBZGJeikJyRmYBDwNrWmJOcSovlOZmUHRzDXH20E0tyI9PLS5ITE7NSy2Jd_YzNDQwAQJzS0djYtQAACw3LK0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Manufacturing method of metal salient point and chip</title><source>esp@cenet</source><creator>MO LEIQING ; SUN BIN</creator><creatorcontrib>MO LEIQING ; SUN BIN</creatorcontrib><description>The invention discloses a manufacturing method of metal salient point and a chip. The method comprises the steps of at least performing first electroplating processing and second electroplating processing on a bonding pad of the chip, and respectively forming a first electroplating layer and a second electroplating layer which are laminated, wherein at least one part of parameters of the first electroplating processing and the second electroplating processing are different; and annealing the chip. By the method, resources can be saved, the risk is reduced, and the production complexity is reduced.
本申请公开了一种金属凸点的制造方法和芯片，该方法包括：对芯片的焊盘至少进行第一电镀处理和第二电镀处理，分别形成层叠第一电镀层和第二电镀层，且第一电镀处理和第二电镀处理的至少部分参数不同；对芯片进行退火处理。通过上述方式，本申请能够节约资源，降低风险，降低生产复杂度。</description><language>chi ; eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191112&DB=EPODOC&CC=CN&NR=110444479A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191112&DB=EPODOC&CC=CN&NR=110444479A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MO LEIQING</creatorcontrib><creatorcontrib>SUN BIN</creatorcontrib><title>Manufacturing method of metal salient point and chip</title><description>The invention discloses a manufacturing method of metal salient point and a chip. The method comprises the steps of at least performing first electroplating processing and second electroplating processing on a bonding pad of the chip, and respectively forming a first electroplating layer and a second electroplating layer which are laminated, wherein at least one part of parameters of the first electroplating processing and the second electroplating processing are different; and annealing the chip. By the method, resources can be saved, the risk is reduced, and the production complexity is reduced.
本申请公开了一种金属凸点的制造方法和芯片，该方法包括：对芯片的焊盘至少进行第一电镀处理和第二电镀处理，分别形成层叠第一电镀层和第二电镀层，且第一电镀处理和第二电镀处理的至少部分参数不同；对芯片进行退火处理。通过上述方式，本申请能够节约资源，降低风险，降低生产复杂度。</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDxTcwrTUtMLiktysxLV8hNLcnIT1HITwOxEnMUihNzMlPzShQK8jOBZGJeikJyRmYBDwNrWmJOcSovlOZmUHRzDXH20E0tyI9PLS5ITE7NSy2Jd_YzNDQwAQJzS0djYtQAACw3LK0</recordid><startdate>20191112</startdate><enddate>20191112</enddate><creator>MO LEIQING</creator><creator>SUN BIN</creator><scope>EVB</scope></search><sort><creationdate>20191112</creationdate><title>Manufacturing method of metal salient point and chip</title><author>MO LEIQING ; SUN BIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN110444479A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MO LEIQING</creatorcontrib><creatorcontrib>SUN BIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MO LEIQING</au><au>SUN BIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Manufacturing method of metal salient point and chip</title><date>2019-11-12</date><risdate>2019</risdate><abstract>The invention discloses a manufacturing method of metal salient point and a chip. The method comprises the steps of at least performing first electroplating processing and second electroplating processing on a bonding pad of the chip, and respectively forming a first electroplating layer and a second electroplating layer which are laminated, wherein at least one part of parameters of the first electroplating processing and the second electroplating processing are different; and annealing the chip. By the method, resources can be saved, the risk is reduced, and the production complexity is reduced.
本申请公开了一种金属凸点的制造方法和芯片，该方法包括：对芯片的焊盘至少进行第一电镀处理和第二电镀处理，分别形成层叠第一电镀层和第二电镀层，且第一电镀处理和第二电镀处理的至少部分参数不同；对芯片进行退火处理。通过上述方式，本申请能够节约资源，降低风险，降低生产复杂度。</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN110444479A |
| source | esp@cenet |
| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
| title | Manufacturing method of metal salient point and chip |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T19%3A39%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MO%20LEIQING&rft.date=2019-11-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN110444479A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |