SENSOR MARK AND METHOD OF MANUFACTURING SENSOR MARK

A sensor mark (17) comprises a substrate (200) having: a first deep ultra violet (DUV) absorbing layer (310, 320, 330) comprising a first material which substantially absorbs DUV radiation; a first protecting layer (600) comprising a second material; wherein: the first DUV absorbing layer has a firs...

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Bibliographische Detailangaben
Hauptverfasser:	NASALEVICH MAXIM, NIKIPELOV ANDREY, WRICKE SANDRO, BANINE VADIM, WELTERS WILHELMUS, BECKERS JOHAN, VLES DAVID, KLUGKIST JOOST, STAS ROLAND, JAMBUNATHAN MADHUSUDHANAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY COLORIMETRY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS RADIATION PYROMETRY TESTING
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Beschreibung
Zusammenfassung:	A sensor mark (17) comprises a substrate (200) having: a first deep ultra violet (DUV) absorbing layer (310, 320, 330) comprising a first material which substantially absorbs DUV radiation; a first protecting layer (600) comprising a second material; wherein: the first DUV absorbing layer has a first through hole (500) in it; the first protecting layer is positioned, in plan, in the first throughhole (500) and the first protecting layer in the first through hole has a patterned region comprising a plurality of through holes (700); and the second material is more noble than the first material. 一种传感器标记，包括衬底(200)，该衬底具有：第一深紫外(DUV)吸收层(310，320，330)，包括基本上吸收DUV辐射的第一材料；第一保护层(600)，包括第二材料；其中：第一DUV吸收层中具有第一通孔(500)；第一保护层在平面图中位于第一通孔(500)中，并且第一通孔中的第一保护层具有包括多个通孔(700)的图案化区域；并且第二材料比第一材料更优质。