High-voltage MOSFET driving circuit
The present invention provides a high-voltage MOSFET driving circuit including a MOSFET module, a MOSFET driving module, an optocoupler module, and an LDO module. The MOSFET module is connected to theMOSFET driving module. The optocoupler module is connected to the LDO module, and both the optocoupl...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The present invention provides a high-voltage MOSFET driving circuit including a MOSFET module, a MOSFET driving module, an optocoupler module, and an LDO module. The MOSFET module is connected to theMOSFET driving module. The optocoupler module is connected to the LDO module, and both the optocoupler module and the LDO module are connected to the MOSFET driving module. The optocoupler module comprises a first resistor, a second resistor and an optocoupler. The LDO circuit includes a fourth resistor, a fifth resistor, a sixth resistor, a sixth capacitor, a seventh capacitor, an eighth capacitor, a ninth capacitor, a first diode, and a low dropout linear regulator. The problem that the high-voltage leakage control power supply difficulty of a gallium nitride tube is solved, the high-voltage MOSFET driving circuit is suitable for the leakage control requirement of TR components of a plurality of radar models and has strong driving ability, fast switching speed and good reliability, andthe development cycle of a |
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