Wet-process groove type black silicon texturing method

The invention discloses a wet-process groove type black silicon texturing method. The method comprises the following steps: carrying out surface treatment on a silicon wafer, and putting the silicon wafer into a primary treatment groove to remove line marks on the surface of the silicon wafer so as to obtain a primary silicon wafer with the smooth surface; performing hole digging and texturing onthe silicon wafer subjected to surface treatment, and putting the obtained primary silicon wafer into a secondary treatment groove for reaction for 180-220s to obtain a secondary silicon wafer with nanoscale small holes in the surface, wherein before the primary silicon wafer is put into the secondary treatment groove, a mixed solution in the secondary treatment groove stops flowing circularly 10-20s in advance until the hole digging is completed; carrying out hole expanding on the silicon wafer subjected to the hole digging and texturing, and putting the secondary silicon wafer subjected to the hole digging into a te