HJT battery and preparation method thereof

The invention discloses an HJT battery and a preparation method thereof. The battery comprises an N-type silicon wafer, wherein intrinsic noncrystalline silicon layers are arranged on the illuminatedface and shady face of the N-type silicon wafer respectively; a P-type doped noncrystalline silicon layer and an N-type doped noncrystalline silicon layer are arranged on the intrinsic noncrystallinesilicon layers respectively; an IMO layer and an ITO layer are arranged on the P-type doped noncrystalline silicon layer in sequence; an ITO conducting film layer is arranged on the N-type doped noncrystalline silicon layer; and metal gate electrodes are arranged on the ITO layer and the ITO conducting film layer respectively. The preparation method comprises the following steps: carrying out texturing cleaning on the N-type silicon wafer; and carrying out deposition/preparation of the intrinsic noncrystalline silicon layers, the P-type doped noncrystalline silicon layer, the N-type doped noncrystalline silicon layer,