Semiconductor device and manufacturing method thereof

The invention provides a semiconductor device and a manufacturing method thereof. According to the manufacturing method of the semiconductor device and the semiconductor device, a groove terminal ringstructure is used for substituting field oxygen so as to arrange a terminal protection ring, an electrostatic protection structure can be arranged on a dielectric layer of which the thickness is reduced, a mode which the electrostatic protection structure is loaded with the field oxygen is substituted, the height difference between the top of the electrostatic protection structure and an epitaxial layer is reduced, damage to an interlayer dielectric layer formed on the electrostatic protection structure during the process of forming an interconnection structure comprising a metal plug and a metal layer is prevented, and the product parameter and performance reliability is improved. 本发明提供一种半导体器件及其制造方法。根据本发明的半导体器件的制造方法和半导体器件，采用沟槽终端环结构代替场氧进行终端保护环设置，从而静电保护结构可以设置在厚度减少的介电层上，取代静电保护结构搭载场氧设置的形式，减少了静电保护结构顶部与外延层之间的高度差，避免了在形