Reaction chamber and semiconductor processing device
The invention provides a reaction chamber and a semiconductor processing device. The reaction chamber comprises a chamber side wall, a chamber bottom wall, a heat exchange element and a heat exchangesource for providing energy, wherein the heat exchange element includes a first part uniformly distri...
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creator | JIANG HONGWEI YANG XIONG CHENG XUWEN |
description | The invention provides a reaction chamber and a semiconductor processing device. The reaction chamber comprises a chamber side wall, a chamber bottom wall, a heat exchange element and a heat exchangesource for providing energy, wherein the heat exchange element includes a first part uniformly distributed on the chamber side wall and a second part uniformly distributed on the chamber bottom wall.According to the reaction chamber provided in the invention, the problem that temperature uniformity is hard to ensure by using a plurality of heaters can be avoided, and the temperature uniformity inthe chamber can also be ensured.
本发明提供一种反应腔室及半导体加工设备,其包括腔室侧壁和腔室底壁,还包括热交换元件和用于提供能量的热交换源,其中,热交换元件包括均匀分布在腔室侧壁中的第一部分,和均匀分布在腔室底壁中的第二部分。本发明提供的反应腔室,其可以避免使用多个加热器很难保证温度一致性的问题,而且还可以保证腔室温度均匀性。 |
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本发明提供一种反应腔室及半导体加工设备,其包括腔室侧壁和腔室底壁,还包括热交换元件和用于提供能量的热交换源,其中,热交换元件包括均匀分布在腔室侧壁中的第一部分,和均匀分布在腔室底壁中的第二部分。本发明提供的反应腔室,其可以避免使用多个加热器很难保证温度一致性的问题,而且还可以保证腔室温度均匀性。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191101&DB=EPODOC&CC=CN&NR=110400763A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191101&DB=EPODOC&CC=CN&NR=110400763A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JIANG HONGWEI</creatorcontrib><creatorcontrib>YANG XIONG</creatorcontrib><creatorcontrib>CHENG XUWEN</creatorcontrib><title>Reaction chamber and semiconductor processing device</title><description>The invention provides a reaction chamber and a semiconductor processing device. The reaction chamber comprises a chamber side wall, a chamber bottom wall, a heat exchange element and a heat exchangesource for providing energy, wherein the heat exchange element includes a first part uniformly distributed on the chamber side wall and a second part uniformly distributed on the chamber bottom wall.According to the reaction chamber provided in the invention, the problem that temperature uniformity is hard to ensure by using a plurality of heaters can be avoided, and the temperature uniformity inthe chamber can also be ensured.
本发明提供一种反应腔室及半导体加工设备,其包括腔室侧壁和腔室底壁,还包括热交换元件和用于提供能量的热交换源,其中,热交换元件包括均匀分布在腔室侧壁中的第一部分,和均匀分布在腔室底壁中的第二部分。本发明提供的反应腔室,其可以避免使用多个加热器很难保证温度一致性的问题,而且还可以保证腔室温度均匀性。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAJSk1MLsnMz1NIzkjMTUotUkjMS1EoTs3NTM7PSylNLskvUigoyk9OLS7OzEtXSEkty0xO5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hoYGJgYG5mbGjsbEqAEAUhstDQ</recordid><startdate>20191101</startdate><enddate>20191101</enddate><creator>JIANG HONGWEI</creator><creator>YANG XIONG</creator><creator>CHENG XUWEN</creator><scope>EVB</scope></search><sort><creationdate>20191101</creationdate><title>Reaction chamber and semiconductor processing device</title><author>JIANG HONGWEI ; YANG XIONG ; CHENG XUWEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN110400763A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JIANG HONGWEI</creatorcontrib><creatorcontrib>YANG XIONG</creatorcontrib><creatorcontrib>CHENG XUWEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JIANG HONGWEI</au><au>YANG XIONG</au><au>CHENG XUWEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Reaction chamber and semiconductor processing device</title><date>2019-11-01</date><risdate>2019</risdate><abstract>The invention provides a reaction chamber and a semiconductor processing device. The reaction chamber comprises a chamber side wall, a chamber bottom wall, a heat exchange element and a heat exchangesource for providing energy, wherein the heat exchange element includes a first part uniformly distributed on the chamber side wall and a second part uniformly distributed on the chamber bottom wall.According to the reaction chamber provided in the invention, the problem that temperature uniformity is hard to ensure by using a plurality of heaters can be avoided, and the temperature uniformity inthe chamber can also be ensured.
本发明提供一种反应腔室及半导体加工设备,其包括腔室侧壁和腔室底壁,还包括热交换元件和用于提供能量的热交换源,其中,热交换元件包括均匀分布在腔室侧壁中的第一部分,和均匀分布在腔室底壁中的第二部分。本发明提供的反应腔室,其可以避免使用多个加热器很难保证温度一致性的问题,而且还可以保证腔室温度均匀性。</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Reaction chamber and semiconductor processing device |
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