Reaction chamber and semiconductor processing device
The invention provides a reaction chamber and a semiconductor processing device. The reaction chamber comprises a chamber side wall, a chamber bottom wall, a heat exchange element and a heat exchangesource for providing energy, wherein the heat exchange element includes a first part uniformly distri...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention provides a reaction chamber and a semiconductor processing device. The reaction chamber comprises a chamber side wall, a chamber bottom wall, a heat exchange element and a heat exchangesource for providing energy, wherein the heat exchange element includes a first part uniformly distributed on the chamber side wall and a second part uniformly distributed on the chamber bottom wall.According to the reaction chamber provided in the invention, the problem that temperature uniformity is hard to ensure by using a plurality of heaters can be avoided, and the temperature uniformity inthe chamber can also be ensured.
本发明提供一种反应腔室及半导体加工设备,其包括腔室侧壁和腔室底壁,还包括热交换元件和用于提供能量的热交换源,其中,热交换元件包括均匀分布在腔室侧壁中的第一部分,和均匀分布在腔室底壁中的第二部分。本发明提供的反应腔室,其可以避免使用多个加热器很难保证温度一致性的问题,而且还可以保证腔室温度均匀性。 |
---|