Reduction production of polycrystalline silicon
A reduction production process of polycrystalline silicon is provided. The process includes providing a reduction furnace; mounting a plurality of silicon core rods in the reduction furnace, and controlling the area of silicon core growing surfaces in unit volume in the furnace; feeding a gas mixtur...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A reduction production process of polycrystalline silicon is provided. The process includes providing a reduction furnace; mounting a plurality of silicon core rods in the reduction furnace, and controlling the area of silicon core growing surfaces in unit volume in the furnace; feeding a gas mixture raw material containing hydrogen and trichlorosilane into the reduction furnace; controlling the temperature in the reduction furnace; allowing polycrystalline silicon to grow on the silicone core rods, and controlling the surface area of polycrystalline silicon finally formed in unit volume in the furnace; stopping supply of the gas mixture raw material; and feeding hydrogen until the temperature in the reduction furnace decreases to a preset value.
多晶硅的还原生产方法,包括:提供还原炉;将多个硅芯棒安装在还原炉中,控制炉内有效单位体积内硅芯生长表面面积;向还原炉中通入氢气和三氯氢硅混合气体原料;控制还原炉内温度;在硅芯棒上生长多晶硅体,控制炉内有效单位体积内最终长成的多晶硅体表面积;停止通入混合气体原料,并切换为通入氢气,直至还原炉内温度降低至预定值。 |
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