HYBRID SWITCH CONTROL

A hybrid switch apparatus includes a standard semiconductor switch and a fast semiconductor switch electrically arranged in parallel to form a joint output current path for carrying a load current. The standard switch may be a silicon (Si) MOSFET while the fast switch may be a GaN high electron mobility transistor (HEMT). A means for producing first and second gate drive signals includes a pulse former. The first gate drive signal is applied the standard switch for selectively turning the standard switch on and off. The pulse former outputs the second gate drive signal for driving the fast switch, where the pulse former generates the second gate drive signal as a switch-on pulse starting synchronously with each transition of the first gate drive signal and which generates the second gate drive signal in an OFF state in between pulses to avoid incurring a conduction loss in the fast switch. 一种混合式开关设备包括标准半导体开关和快速半导体开关，标准半导体开关和快速半导体开关电气并联地布置以形成联合输出电流路径以用于承载负载电流。标准开关可以是硅（Si）MOSFET，而快速开关可以是GaN高电子迁移率晶体管（HEMT）。一种用于产