Three-level IGBT driving circuit based on QP12W05S-37

The invention discloses a three-level IGBT circuit structure based on QP12W05S-37. The driving structure comprises a control module, a PWM output buffer circuit, a temperature protection circuit, an over-current and short-circuit protection circuit and four paths of IGBT units. The IGBT units have the same structure and each IGBT unit is composed of an IGBT module and a QP12W05S-37 driver. According to the invention, four MORNSUN IGBT driving chips QP12W05S-37 are used for constructing a three-level IGBT drive circuit, so the number of required devices is small, too large PCB space does not need to be occupied, and meanwhile good over-current and short-circuit protection is achieved. 本发明揭示了一种基于QP12W05S-37的三电平IGBT驱动电路，三电平IGBT电路结构由控制模块、PWM输出缓冲电路、温度保护电路、过流和短路保护电路、以及四路IGBT单元组成，每路IGBT单元结构相同由一个IGBT模块和一个QP12W05S-37驱动器构成。本发明基于QP12W05S-37的三电平IGBT驱动电路,使用4片金升阳的IGBT驱动芯片QP12W05S-37构建三电平IGBT驱动电路，所需器件少，无需占用太大的PCB板空间，同时具有良好的过流及短路保护。