METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

The invention provides a method for manufacturing a semiconductor device capable of improving productivity and a semiconductor device. According to the embodiment of the invention, the method for manufacturing the semiconductor device includes the steps: preparing a wafer including sapphire, the waf...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KAGOSHIMA YUYA, HIGASHITANI KEISUKE, OZAKI CHIAKI, MIYAMOTO YOSHINORI, OKABE TOKUTARO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The invention provides a method for manufacturing a semiconductor device capable of improving productivity and a semiconductor device. According to the embodiment of the invention, the method for manufacturing the semiconductor device includes the steps: preparing a wafer including sapphire, the wafer having an upper surface that includes a first region and a second region, the second region surrounding the first region and located at a position at least 2 microns higher or lower than the first region; and forming a semiconductor layer at the upper surface, the semiconductor layer including atleast one layer that comprises AlzGa1-zN (0.03