SILICON CARBIDE POROUS BODY AND METHOD FOR PRODUCING THE SAME

The invention provides a silicon carbide porous body having higher thermal shock resistance and a method for producing the same. The silicon carbide porous body includes: (A) silicon carbide particlesas an aggregate; and (B) at least one selected from the group consisting of metallic silicon, alumin...

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Hauptverfasser: KODAMA SUGURU, HAMAZAKI MAKOTO
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides a silicon carbide porous body having higher thermal shock resistance and a method for producing the same. The silicon carbide porous body includes: (A) silicon carbide particlesas an aggregate; and (B) at least one selected from the group consisting of metallic silicon, alumina, silica, mullite and cordierite. The silicon carbide porous body has amorphous and/or crystallineSiO2 or SiO on a surface(s) of the component (A) and/or the component (B). The silicon carbide porous body contains 6% by mass or less of alpha-cristobalite in the amorphous and/or crystalline SiO2 or SiO. 本发明提供一种具有高耐热冲击性的碳化硅质多孔体及其制造方法。一种碳化硅质多孔体,其包含:(A)作为骨料的碳化硅粒子、以及(B)从由金属硅、氧化铝、二氧化硅、多铝红柱石、堇青石构成的组中选择的至少一种,且在所述(A)和/或(B)的表面具有非晶质和/或结晶质的SiO或者SiO,其中,所述非晶质和/或结晶质的SiO或者SiO中所包含的α-方英石为6质量%以下。