Data read-write structure and data read-write method for full-row coding and decoding SRAM (Static Random Access Memory) encoder

The invention discloses a data read-write structure and a data read-write method for a full-row coding and decoding SRAM (Static Random Access Memory) encoder. A register is used for temporarily storing data of the whole line of the SRAM encoder and the data of an EDAC module. Therefore, a plurality...

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Hauptverfasser: XIE CHENGMIN, LI LI
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention discloses a data read-write structure and a data read-write method for a full-row coding and decoding SRAM (Static Random Access Memory) encoder. A register is used for temporarily storing data of the whole line of the SRAM encoder and the data of an EDAC module. Therefore, a plurality of address data in one row are uniformly encoded and stored. The total capacity of the memory is reduced while the storage capacity of EDAC codes is reduced, thereby greatly reducing memory area. Data in the SRAM encoder is read out one by one, then verified, corrected and written in to prevent the accumulation effect of time on memory errors, so that the contents of the memory need to be refreshed, only one address in a row of data needs to be accessed, the refreshing of the whole row can berealized, the refreshing efficiency is improved, and the refreshing time is shortened. The EDAC module is adopted for error correction and detection, when a storage data bit error occurs in the storage, error correction and de