CLEANING METHOD AND FILM FORMING APPARATUS

There is provided a method of cleaning a film forming apparatus conducted after a film forming process by supplying a source gas and a reaction gas to produce a reaction product into a processing container to form a film of the reaction product on a substrate. The method includes: controlling, in the film forming process, a first film deposited in the processing container and a second film deposited in a source gas supply part to become different kinds of films; performing, after the film forming process, a cleaning process by supplying a cleaning gas having an etching selection ratio of the second film to the first film being greater than 1 so as to etch and remove the second film; and performing, after the cleaning process, a surface control process of making a surface state of the first film close to a state before the cleaning process was performed. 本发明提供一种清洗方法和成膜装置。一种在进行成膜处理之后实施的针对成膜装置的清洗方法，在该成膜处理中，向成膜装置的处理容器内供给原料气体以及能够与原料气体发生反应并生成反应生成物的反应气体，来在基板上形成反应生成物的膜，所述清洗方法包括：在成膜处理中进行控制，使得处理容器内沉积的第一膜与原料气体供给部内沉积的第二膜