Power semiconductor device and method for manufacturing same

The present invention relates to a power semiconductor device and a method for manufacturing the same. The power semiconductor device includes a drain region and a source region disposed on a substrate, a gate insulating layer and a gate electrode disposed on the substrate and disposed between the d...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JUN HEE CHO, TAE HOON LEE, JIN SEONG CHUNG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!