THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE
The purpose of the present invention is to provide a feature with which it is possible to reduce the contact resistance between a channel region and a source electrode and drain electrode. This thin film transistor comprises: a first semiconductor layer disposed on a first insulation film on a gate...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The purpose of the present invention is to provide a feature with which it is possible to reduce the contact resistance between a channel region and a source electrode and drain electrode. This thin film transistor comprises: a first semiconductor layer disposed on a first insulation film on a gate electrode, the first semiconductor layer adjoining, in plan view, a portion region that is a part of the first insulation film on the gate electrode; a source electrode and a drain electrode sandwiching the portion region in the plan view; a second insulation film in which there is provided an opening above the portion region; and a second semiconductor layer disposed on the second insulation film. The second semiconductor layer is in contact with the source electrode and the drain electrode, and is also in contact with the portion region and the first semiconductor layer via the opening in the second insulation film.
其目的在于提供一种能够降低源电极以及漏电极与沟道区域之间的接触电阻的技术。薄膜晶体管具备:第1半导体层,配设于栅电极上的第1绝缘膜上,在俯视时与作为栅电极上的第1绝缘膜的一部分的部分区域邻接;源电 |
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