Support structure and heat treatment device therewith
The invention provides a support structure and a heat treatment device therewith. An upper surface of the support structure is formed with an annular support surface capable of forming surface contact with a lower surface of a silicon wafer for supporting the silicon wafer when the silicon wafer is...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a support structure and a heat treatment device therewith. An upper surface of the support structure is formed with an annular support surface capable of forming surface contact with a lower surface of a silicon wafer for supporting the silicon wafer when the silicon wafer is heated. The support structure is advantaged in that a problem that the silicon wafer slips seriously as the silicon wafer is strongly pressed during heating is solved, the support structure can increase the contact area between the silicon wafer and the support structure, so the silicon wafer is evenly and stably stressed, the pressure on the silicon wafer during heating of the silicon wafer is reduced, the dislocation position is controlled, slippage is ameliorated, silicon wafer performance and the product yield are improved, the support structure is easy to replace, and damage or deformation is easy to detect.
本发明提供一种支撑结构和具有其的热处理装置,所述支撑结构的上表面形成有能够与硅片的下表面形成面接触的环形支撑面,用以在对硅片进行加热时支撑硅片。根据本发明的支撑结构,能够解决硅片被加热期间硅片所受压强大,硅 |
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