Compositions and methods for chemical mechanical polishing of silicon oxide, silicon nitride, and polysilicon materials

The present invention provides compositions and methods for chemical mechanical polishing of silicon oxide, silicon nitride, and polysilicon materials. The methods are used for polishing substrates comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprises a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer. 本发明提供用于氧化硅、氮化硅、和多晶硅材料的化学机械抛光的组合物和方法。该方法用于抛光包括二氧化硅、氮化硅、和多晶硅的基材。该方法包括用CMP组合物研磨该基材的表面以从其移除至少一些二氧化硅、氮化硅、和多晶硅。该CMP组合物包括悬浮在具有3至9.5的pH且含有阳离子聚合物的含水载体中的粒状二氧化铈研磨剂；其中该阳离子聚合物由甲基丙烯酰氧烷基季铵聚合物组成。