Semiconductor device and forming method thereof

The invention discloses a semiconductor device and a forming method thereof. The semiconductor device comprises a substrate, a first plug, a magnetoresistive memory structure, a side wall layer, a sealing layer and a first conductive pattern. The substrate has a first region and a second region, and the first plug is arranged in a dielectric layer on the substrate and is located in the first region. The magnetoresistive memory structure is arranged in the dielectric layer and is electrically connected with the first plug. The side wall layer is arranged in the first region and the second region, and covers the magnetoresistive memory structure. The sealing layer is arranged on the side wall layer and the magnetoresistive memory structure, and is only located in the first region. The firstconductive pattern runs through the sealing layer to be electrically connected to the magnetoresistive memory structure. 本发明公开一种半导体装置及其形成方法，该半导体装置包含基底、第一插塞、磁阻式存储器结构、侧壁层、密封层以及第一导电图案。该基底具有第一区域与第二区域，该第一插塞是设置在该基底上的介电层内，位于该第一区域。该磁