HEAT TREATMENT METHOD

Provided is a heat treatment method capable of shortening the time required for loading and unloading a substrate into and from a chamber. In the heat treatment method of the present invention, at a time (t6) before a time (t7) at which a semiconductor wafer is cooled to a transportable temperature (T3), a transport preparation operation for transporting the semiconductor wafer out of a processingchamber is started. In addition, the gate valve is closed at a time (t3) after the time (t2) at which the processing of the semiconductor wafer is started, and the operation of carrying the semiconductor wafer into the processing chamber is completed. By overlapping a period for processing the semiconductor wafer with a period for carrying in and out the semiconductor wafer, it is possible to shorten the time required for carrying in and out the semiconductor wafer with respect to the processing chamber. 本发明提供一种能够缩短衬底相对于腔室的搬入搬出所需要的时间的热处理方法。本发明的热处理方法中，在半导体晶圆降温到可搬出温度(T3)的时刻(t7)之前的时刻(t6)，开始进行用来将半导体晶圆从处理腔室搬出的搬出准备动作。另外，在开