Method for regulating and controlling M-shaped resistance characteristic curve of graphene field effect transistor

The invention provides a method for regulating and controlling an M-shaped resistance characteristic curve of a graphene field effect transistor. The method has application prospects in the fields ofelectronic circuits, micro-nano electronics and the like. The structure of a graphene field effect transistor device is characterized in that two metal gates with different work functions are arrangedon a gate dielectric layer close to the upper part of a graphene channel. The graphene field effect transistor with the structure can generate the M-shaped resistance characteristic curve, and the controllable adjustment of the shape of the M-shaped resistance characteristic curve can be realized by selecting the types and the relative lengths of the two kinds of gate metals. 本发明提出了一种调控石墨烯场效应晶体管的M形电阻特性曲线方法，在电子电路、微纳电子学等领域具有应用前景。本发明提出的石墨烯场效应晶体管器件结构：紧靠石墨烯沟道上方栅介质层有两种不同功函数的金属栅。这种结构的石墨烯场效应晶体管可产生M形电阻特性曲线，并且通过选择这两种栅金属的种类和相对长度可实现对M形电阻特性曲线形状的可控调节。