METHOD OF PROCESSING SEMICONDUCTOR SUBSTRATE AND DEVICE FOR PROCESSING SEMICONDUCTOR SUBSTRATE

The invention provides a technique by which it is possible to smooth a protective film when forming the protective film on a surface side (one side) before the step of reducing the thickness of a backsurface side (the other side) of a semiconductor wafer on which an integrated circuit chip is formed. A device for processing a semiconductor substrate according to the invention includes a module (51) that applies a curing agent (11) for peeling on a front surface side of a wafer W; a module (54) that cures the curing agent (11) via irradiation of ultraviolet rays; a module (52) that applies a curing agent (12) for a protective film on top of the curing agent (11); a module (56) that cures the curing agent (12) via irradiation of ultraviolet rays once the front surface of the curing agent has been pressed by a pressing member (14) comprising a glass plate; a device (G) that subsequently back grinds the wafer (W); a module that bonds a dicing tape on the back surface side of the wafer (W); and a module that subse