High-speed broadband modeling method, system and device and storage medium

The invention belongs to the technical field of integrated circuits, and particularly relates to a high-speed broadband modeling method, system and device and a storage medium. The method comprises: acquiring parameter information of the TSV; performing first simulation on the TSV according to the parameter information to obtain a TSV three-dimensional structure model; and obtaining an equivalentcircuit model according to the three-dimensional structure model. According to the method, through simulating the TSV to establish the three-dimensional structure model and analyzing the three-dimensional structure model to establish an equivalent model, an equivalent circuit model is constructed by calculating the MOS parasitic capacitance formed by the TSV and the oxide layer and the silicon substrate and the capacitance, resistance, inductance and conductivity naturally formed by the bonding bumps of the multilayer interconnection structure, so that the influence of eddy current loss, parasitic effect and proximity