Solar cell inverter of MgZnO film transistor having circular structure and preparation method thereof

The invention discloses a solar cell inverter of a MgZnO film transistor having a circular structure and a preparation method thereof. The MgZnO film is prepared, the solar cell inverter structure isdesigned, and the inverter structure is a combination of electrode-insulating layer-channel layer-electrode structures and is formed by sequentially laminating and assembling by a Cr electrode, a SiO2substrate, an MZO channel and an Au electrode. Compared with a traditional inverter, the solar cell inverter has a high blocking voltage and a high pinch-off voltage, is safe and non-toxic and is suitable for use in solar power generation in daily life, the price is lower than that of an IGZO material, the solar cell inverter is suitable for use in large-scale solar cells, a substrate of the solar cell inverter adopts glass, an MZO film is a transparent film, and the solar cell inverter has a greater advantage in aesthetics than conventional solar cells. 本发明公开了一种圆形结构的MgZnO薄膜晶体管的太阳能电池逆变器及其制备方法，制备了MgZnO薄膜，对太阳能电池逆变器的结构进行