Phase change memory read-write control method and system based on double-threshold gating tube

The invention discloses a phase change memory read-write control method and system based on a double-threshold gating tube. The read-write control method comprises the following steps: (1) after an operated storage unit is selected, applying different bias voltages to the two ends of the storage unit; (2) acquiring data stored in the current storage unit according to the magnitude of current flowing through the storage unit; (3) if the current operation is the reading operation, outputting data; and if the current operation is the write operation, comparing the written data with the read data,and carrying out corresponding operation on the storage unit according to a comparison result. In the method, the double-threshold gating tube needs to be switched on and switched off through voltagetype excitation. The phase change storage medium needs current type excitation to carry out stable reset and setting operation, aiming at the two properties. The invention provides an operation scheme for switching different