SPLIT-GATE FLASH CELL FORMED ON RECESSED SUBSTRATE

The present invention discloses a semiconductor device including a non-volatile memory (NVM) cell and method of making the same. The semiconductor device includes a metal-gate logic transistor formedon a logic region of a substrate, and the NVM cell integrally formed in a first recess in a memory region of the same substrate, wherein the first recess is recessed relative to a first surface of thesubstrate in the logic region. Generally, the metal-gate logic transistor further including a planarized surface above and substantially parallel to the first surface of the substrate in the logic region, and the NVM cell is arranged below an elevation of the planarized surface of the metal-gate. In some embodiments, logic transistor is a High-k Metal-gate (HKMG) logic transistor with a gate structure including a metal-gate and a high-k gate dielectric. Other embodiments are also disclosed. 公开了一种包括非易失性存储器(NVM)单元的半导体器件及其制造方法。该半导体器件包括形成在衬底的逻辑区域上的金属栅极逻辑晶体管，以及集成地形成在相同衬底的存储器区域中的第一凹槽中的NVM单元，其中，第一凹槽相对于逻辑区域中的衬底的第一表面凹陷。通常，金属栅极