Non-polar ALGAN-based Schottky UV detector
The invention provides a non-polar ALGAN-based Schottky UV detector. The non-polar ALGAN-based Schottky UV detector is sequentially provided with a substrate, a low temperature AlN nucleation layer, ahigh temperature AlN buffer layer, an AlN/AlxGa1-xN superlattice structure, an n-type doped n-AlyGa1...
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| creator | CUI YIPING ZHANG XIONG RAO LIFENG |
| description | The invention provides a non-polar ALGAN-based Schottky UV detector. The non-polar ALGAN-based Schottky UV detector is sequentially provided with a substrate, a low temperature AlN nucleation layer, ahigh temperature AlN buffer layer, an AlN/AlxGa1-xN superlattice structure, an n-type doped n-AlyGa1-yN layer, an n-type doped n-AlzGa1-zN absorption layer, an AlN barrier enhancement layer and a metal film layer from bottom to top, wherein an ohmic electrode is extracted in the n-AlyGa1-yN layer, and o |
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The non-polar ALGAN-based Schottky UV detector is sequentially provided with a substrate, a low temperature AlN nucleation layer, ahigh temperature AlN buffer layer, an AlN/AlxGa1-xN superlattice structure, an n-type doped n-AlyGa1-yN layer, an n-type doped n-AlzGa1-zN absorption layer, an AlN barrier enhancement layer and a metal film layer from bottom to top, wherein an ohmic electrode is extracted in the n-AlyGa1-yN layer, and o<y<z<x<1. The detector is advantaged in that as the non-polar n-AlyGa1-yN layer has a laterallypolarized electric field directed from an anode to a cathode, photogenerated carriers in the n-AlyGa1-yN layer are accelerated to migrate to the ohmic electrode, photocurrent generation efficiency isgreatly improved, and thereby photoelectric conversion efficiency and responsiveness of the device are improved; the AlN/AlxGa1-xN superlattice structure is inserted, buffer layer barrier height is increased, and crystal quali</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190823&DB=EPODOC&CC=CN&NR=110164996A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190823&DB=EPODOC&CC=CN&NR=110164996A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CUI YIPING</creatorcontrib><creatorcontrib>ZHANG XIONG</creatorcontrib><creatorcontrib>RAO LIFENG</creatorcontrib><title>Non-polar ALGAN-based Schottky UV detector</title><description>The invention provides a non-polar ALGAN-based Schottky UV detector. The non-polar ALGAN-based Schottky UV detector is sequentially provided with a substrate, a low temperature AlN nucleation layer, ahigh temperature AlN buffer layer, an AlN/AlxGa1-xN superlattice structure, an n-type doped n-AlyGa1-yN layer, an n-type doped n-AlzGa1-zN absorption layer, an AlN barrier enhancement layer and a metal film layer from bottom to top, wherein an ohmic electrode is extracted in the n-AlyGa1-yN layer, and o<y<z<x<1. The detector is advantaged in that as the non-polar n-AlyGa1-yN layer has a laterallypolarized electric field directed from an anode to a cathode, photogenerated carriers in the n-AlyGa1-yN layer are accelerated to migrate to the ohmic electrode, photocurrent generation efficiency isgreatly improved, and thereby photoelectric conversion efficiency and responsiveness of the device are improved; the AlN/AlxGa1-xN superlattice structure is inserted, buffer layer barrier height is increased, and crystal quali</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDyy8_TLcjPSSxScPRxd_TTTUosTk1RCE7OyC8pya5UCA1TSEktSU0uyS_iYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhgaGZiaWlmaOxsSoAQCzhCf-</recordid><startdate>20190823</startdate><enddate>20190823</enddate><creator>CUI YIPING</creator><creator>ZHANG XIONG</creator><creator>RAO LIFENG</creator><scope>EVB</scope></search><sort><creationdate>20190823</creationdate><title>Non-polar ALGAN-based Schottky UV detector</title><author>CUI YIPING ; ZHANG XIONG ; RAO LIFENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN110164996A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CUI YIPING</creatorcontrib><creatorcontrib>ZHANG XIONG</creatorcontrib><creatorcontrib>RAO LIFENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CUI YIPING</au><au>ZHANG XIONG</au><au>RAO LIFENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Non-polar ALGAN-based Schottky UV detector</title><date>2019-08-23</date><risdate>2019</risdate><abstract>The invention provides a non-polar ALGAN-based Schottky UV detector. The non-polar ALGAN-based Schottky UV detector is sequentially provided with a substrate, a low temperature AlN nucleation layer, ahigh temperature AlN buffer layer, an AlN/AlxGa1-xN superlattice structure, an n-type doped n-AlyGa1-yN layer, an n-type doped n-AlzGa1-zN absorption layer, an AlN barrier enhancement layer and a metal film layer from bottom to top, wherein an ohmic electrode is extracted in the n-AlyGa1-yN layer, and o<y<z<x<1. The detector is advantaged in that as the non-polar n-AlyGa1-yN layer has a laterallypolarized electric field directed from an anode to a cathode, photogenerated carriers in the n-AlyGa1-yN layer are accelerated to migrate to the ohmic electrode, photocurrent generation efficiency isgreatly improved, and thereby photoelectric conversion efficiency and responsiveness of the device are improved; the AlN/AlxGa1-xN superlattice structure is inserted, buffer layer barrier height is increased, and crystal quali</abstract><oa>free_for_read</oa></addata></record> |
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| title | Non-polar ALGAN-based Schottky UV detector |
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