Non-polar ALGAN-based Schottky UV detector

Non-polar ALGAN-based Schottky UV detector

The invention provides a non-polar ALGAN-based Schottky UV detector. The non-polar ALGAN-based Schottky UV detector is sequentially provided with a substrate, a low temperature AlN nucleation layer, ahigh temperature AlN buffer layer, an AlN/AlxGa1-xN superlattice structure, an n-type doped n-AlyGa1...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CUI YIPING, ZHANG XIONG, RAO LIFENG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention provides a non-polar ALGAN-based Schottky UV detector. The non-polar ALGAN-based Schottky UV detector is sequentially provided with a substrate, a low temperature AlN nucleation layer, ahigh temperature AlN buffer layer, an AlN/AlxGa1-xN superlattice structure, an n-type doped n-AlyGa1-yN layer, an n-type doped n-AlzGa1-zN absorption layer, an AlN barrier enhancement layer and a metal film layer from bottom to top, wherein an ohmic electrode is extracted in the n-AlyGa1-yN layer, and o