Polycrystalline silicon selection method, polycrystalline silicon and application of polycrystalline silicon in Czochralski method

The invention relates to the field of silicon manufacture and particularly relates to a polycrystalline silicon selection method, polycrystalline silicon and application of the polycrystalline siliconin a Czochralski method. The polycrystalline silicon selection method comprises the following steps of cutting polycrystalline silicon raw materials into polycrystalline silicon plates; carrying outgrinding and etching on surfaces of the polycrystalline silicon plates, thereby obtaining polycrystalline silicon plate test samples; and observing the surfaces of the polycrystalline silicon plates under a condition of a fluorescent lamp, and judging and selecting the polycrystalline silicon raw material most applicable to the Czochralski method according to surface shape features of the polycrystalline silicon plate test samples. According to the polycrystalline silicon selection method, through utilization of a naked eye direct observation method, the polycrystalline silicon raw material relatively applicable to the