Polycrystalline silicon melting parameter detection method, polycrystalline silicon, monocrystalline silicon, and manufacturing method of monocrystalline silicon

The embodiment of the invention provides a polycrystalline silicon melting parameter detection method, polycrystalline silicon, monocrystalline silicon, and a manufacturing method of the monocrystalline silicon. The polycrystalline silicon melting parameter detection method comprises the following steps: providing a plurality of polycrystalline silicon samples meeting preset requirements; respectively carrying out diffraction analysis on the polycrystalline silicon samples, so as to determine variations of diffraction intensities on a designated Miller index surface (hkl); and according to thevariations of the diffraction intensities on the designated Miller index surface (hkl), determining melting parameters of the polycrystalline silicon samples. Therefore, silicon briquets with high melting performance can be obtained through screening, and the silicon briquets obtained through the screening can be used as raw materials for monocrystalline silicon production, so that the phenomenonof disorderly crystal lin