Production method of silicon carbide inorganic ceramic film

The invention relates to a production method of a silicon carbide inorganic ceramic film, and the method comprises the following steps: (1) carrying out hydrogen etching on the surface of silicon carbide powder; (2) generating a graphene thin layer on the surface of the silicon carbide powder; (3) converting the generated graphene into graphene oxide; (4) swelling the generated graphene oxide; (5)molding the silicon carbide powder; (6) performing reduction and solidification of silicon carbide. The method takes the silicon carbide to epitaxially grow the graphene as a technical basis and provides an innovative silicon carbide inorganic ceramic film production process and method. The silicon carbide inorganic ceramic film prepared by the method has the advantages of small filtering aperture, high aperture distribution precision, good mechanical strength of the film body and high bending strength. 本发明涉及一种碳化硅无机陶瓷膜的生产方法，包括如下步骤：(1)对碳化硅粉末表面进行氢刻蚀；(2)在碳化硅粉末表面生成石墨烯薄层；(3)将生成的石墨烯转化为氧化石墨烯；(4)使生成的氧化石墨烯溶胀；(5)碳化硅粉末塑性；(6)碳化硅