Bit Line manufacturing method

The invention discloses a bit Line manufacturing method comprising the steps that firstly a substrate is provided, an amorphous silicon layer covers the substrate, then a titanium nitride layer is formed to cover and contact the amorphous silicon layer, then a titanium layer is formed to cover the titanium nitride layer, then a conductive layer is formed to cover the titanium layer, then a heatingmanufacturing process is performed to convert the titanium nitride layer into a nitrogen-containing titanium silicide layer and convert the titanium layer into a titanium silicide layer, and then theconductive layer, the titanium silicide layer, the nitrogen-containing titanium silicide layer and the amorphous silicon layer are patterned so as to form a bit line. 本发明公开一种位线的制作方式，包含首先提供一基底，基底上覆盖有一非晶硅层，然后形成一氮化钛层覆盖并接触非晶硅层，之后形成一钛层覆盖氮化钛层，然后形成一导电层覆盖钛层，接着进行一加热制作工艺，将氮化钛层转化成一含氮硅化钛层并且将钛层转化为硅化钛层，然后再图案化导电层、硅化钛层、含氮硅化钛层和非晶硅层以形成一位线。