Threshold voltage drift detection method and threshold voltage drift detection device

The invention provides a threshold voltage drift detection method and a threshold voltage drift detection device. The threshold voltage drift detection method is applied to a pixel driving circuit, and the pixel driving circuit is electrically and separately connected with a control line, a voltage...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SUN XUECHAO, LI GUANGYAO, LIANG QIBIN, FENG BO, LIU RONG, GUI XUEHAI, WANG HAITAO, WAN YANFEI, WANG DONGFANG, WANG JUN, SU JIN, CAI WEI, HAO CHAOWEI, LUO BIAO
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention provides a threshold voltage drift detection method and a threshold voltage drift detection device. The threshold voltage drift detection method is applied to a pixel driving circuit, and the pixel driving circuit is electrically and separately connected with a control line, a voltage line and a detection node. The detection period comprises a setting stage and a detection stage, andthe threshold voltage drift detection method comprises the following steps of at the setting stage, controlling a transistor included in the pixel driving circuit to be in a bias state; and at the detection stage, providing a predetermined control voltage signal for the control line to provide a predetermined voltage signal for the voltage line, and judging the threshold voltage drift state of the transistor according to the potential of the detection node. According to the present invention, the bias temperature stress test can be directly carried out, and the threshold voltage drift state of the transistor included