CHARGE AVALANCHE PHOTODETECTOR SYSTEM

Disclosed is a charge avalanche photodetector system comprising a charge avalanche photodetector based on the charge avalanche effect, e.g. a silicon photomultiplier (1), and an electronic amplifier (2) that is electrically connected downstream of the charge avalanche photodetector, which can be sel...

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Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Disclosed is a charge avalanche photodetector system comprising a charge avalanche photodetector based on the charge avalanche effect, e.g. a silicon photomultiplier (1), and an electronic amplifier (2) that is electrically connected downstream of the charge avalanche photodetector, which can be selectively operated with or without a bias. Depending on the bias, the charge avalanche photodetectorcan be operated in the Geiger mode, in the charge integration mode and as a PIN photodiode. This allows the dynamic range of the detector system to be extended, thereby enabling the detection of bothlow-intensity and high-intensity optical signals. 公开了一种电荷雪崩光电探测器系统,包括基于电荷雪崩原理的电荷雪崩光电探测器以及电连接在所述电荷雪崩光电探测器下游的放大器电子器件(2),所述电荷雪崩光电探测器例如为硅光电倍增器(1),所述电荷雪崩光电探测器能够选择性的利用偏置电压或不利用这种偏置电压操作。根据该偏置电压,所述电荷雪崩光电探测器能够在盖格模式、电荷积分模式和PIN光电二极管模式下操作。这使得探测器系统的动态范围被扩展,由此既能够探测低强度光信号又能够探测高强度光信号。